Chemical functionalization of carbon nano tubes is a very hot topic as it is considered now as one of the key step for the fabrication of tube based electronic devices. By nature, carbon nanotubes are chemically quite inert and thus defects are required as seed for the growth of functional layers. In a recent simulation study Anja shows now, how the first steps of aluminum oxide atomic layer deposition can be performed on typical CNT defects [bibcite key=forster2017ab]. Continue reading
Tag Archives: ALD
Surface chemistry of copper metal and copper oxide atomic layer deposition
[bibshow file =js.bib]In a recent paper in Physical chemistry chemical Physis we study the mechanisms for atomic layer deposition using the Cu(acac)2 precursor [bibcite key=hu2015surface]. By first-principles calculations and reactive molecular dynamics simulations we show that Cu(acac)2 chemisorbs on the hollow site of the Cu(110) surface and decomposes easily into a Cu atom and the acac-ligands. Continue reading
Two contributions to MAM 2014 are now published in Micrelectronic Engineering
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Two contributions from the group are now published in a special issue of Microelectronics Engineering which contains original paper from the “Materials for advanced metallization conference 2014” held in Chemnitz, Germany. Continue reading