Empirical transport model of strained CNT transistors used for sensor applications

cnt_psCarbon nanotubes show electronic properties which are remarkably sensitive to mechanical strain. Thus, CNTs are expected to be promising candidates for nano scale strain sensors.  Even more, they are discussed as a key component of future nano-opto-electro-mechanical systems (NOEMS).

Consequently, a comprehensive model for strained CNT transistors was recently published by Christian . Continue reading

Modeling the in situ repair of ULK dielectrics

repair

Ultra low-k dielectrics are one of the key components  which allow for further shrinking of the the interconnect system used in todays semiconductor technology. During manufacturing steps such as trench etching the ULK material is degraded and some repair chemistry is required to restore its k-value. In a recent paper which appeared in Journal of Vacuum Science and technology   Anja now modeled elementary steps of such an in-situ repair approach by using DFT calculations.   Continue reading