Empirical transport model of strained CNT transistors used for sensor applications

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cnt_psCarbon nanotubes show electronic properties which are remarkably sensitive to mechanical strain. Thus, CNTs are expected to be promising candidates for nano scale strain sensors.  Even more, they are discussed as a key component of future nano-opto-electro-mechanical systems (NOEMS).

Consequently, a comprehensive model for strained CNT transistors was recently published by Christian [bibcite key=wagner2016empirical]. The tranistor model describes the intrinsic physics of strained carbon nanotubes as well as the relevant figure of merit for CNT-based strain strensors, the gauge factor. The gauge factor of CNT-based strain sensors may reach record values of more than 200. In the paper we show, how it can be tuned to reach its optimum value by applying a gate voltage. Besides single chirality CNTs the impact of CNT mixtures on the sensor properties is captured by the model as well.